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Freescale Semiconductor Technical Data
Document Number: MHW10186N Rev. 0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features * Specified for 79 - , 112 - and 132 - Channel Loading * Excellent Distortion Performance * Built - in Input Diode Protection * GaAs FET Transistor Technology * Unconditionally Stable Under All Load Conditions Applications * CATV Systems Operating in the 40 to 1000 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module * RoHS Compliant Table 1. Maximum Ratings
Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg
MHW10186N
1000 MHz 18.5 dB GAIN 132 - CHANNEL GaAs CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1 Value +65 +26 - 20 to +100 - 40 to +100 Unit dBmV Vdc C C
Table 2. ESD Maximum Ratings
Rating Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil. Std. 1686 Input Value 300 2 Output Value 300 2 Unit V kV
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted)
Characteristic Frequency Range Power Gain Slope Gain Flatness (40 - 1000 MHz, Peak - to - Valley) Return Loss -- Input (Zo = 75 Ohms) 40 - 200 MHz 201 - 600 MHz 601 - 870 MHz 871 - 1000 MHz ORL 40 - 200 MHz 201 - 600 MHz 601 - 870 MHz 871 - 1000 MHz 20 19 18 17 -- -- -- -- -- -- -- -- 1000 MHz 40 - 1000 MHz Symbol BW Gp S GF IRL 20 19 18 15 -- -- -- -- -- -- -- -- dB Min 40 18 0.2 -- Typ -- 18.5 0.6 0.3 Max 1000 19.5 1.2 0.8 Unit MHz dB dB dB dB
Return Loss -- Output (Zo = 75 Ohms)
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHW10186N 1
RF Device Data Freescale Semiconductor
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) (continued)
Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +46 dBmV/ch., FM = 55 MHz) (Vout = +44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT 79 - Channel FLAT 112 - Channel FLAT 132 - Channel FLAT 50 MHz 870 MHz 1000 MHz Symbol CSO79 CSO112 CSO132 XMD79 XMD112 XMD132 CTB79 CTB112 CTB132 NF Min -- -- -- -- -- -- -- -- -- -- -- -- 230 Typ - 72 - 65 - 67 - 58 - 58 - 58 - 64 - 61 - 62 4 3.7 4.1 250 Max - 64 - 61 - 60 dBc -- -- -- dBc - 60 - 58 - 58 5 5 5 265 dB Unit dBc
DC Current (VDC = 24 V, TC = - 20 to +100C)
IDC
mA
MHW10186N 2 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A Z J A S B V R Q 0.010
M NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. INCHES MIN MAX --- 1.775 --- 1.085 --- 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 --- 0.600 1.500 BSC 0.200 BSC --- 0.250 0.435 --- 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX --- 45.085 --- 27.559 --- 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 --- 15.24 38.100 BSC 5.080 BSC --- 6.350 11.049 --- 10.160 BSC 3.861 4.140 0.229 0.279
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A
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12
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C E K Z W
DIM A B C D E F G J K L N P Q R S U V W X Y Z
X T
2X 4X
G
7X
D
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P X TA
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Y
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0.020
X
0.010
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ZTA
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9.
RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT
CASE 1302 - 01 ISSUE E
MHW10186N RF Device Data Freescale Semiconductor 3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2006 Description
* Initial Release of Data Sheet
MHW10186N 4 RF Device Data Freescale Semiconductor
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MHW10186N
Document Number: RF Device Data MHW10186N Rev. 0, 11/2006 Freescale Semiconductor
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